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| AO4407A P-Channel Enhancement Mode Field Effect Transistor General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4407A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS = -30V (VGS = -10V) ID = -12A RDS(ON) < 11m (VGS = -20V) RDS(ON) < 13m (VGS = -10V) RDS(ON) < 38m (VGS = -10V) UIS TESTED! RG, CISS, COSS, CRSS TESTED! SOIC-8 Top View S S S G D D D D G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS 25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH G Power Dissipation A B Units V V TA=25C TA=70C ID IDM IAR EAR PD TJ, TSTG TA=25C TA=70C -12 -10 -60 26 101 3.1 2.0 -55 to 150 -9.2 -7.4 A mJ 1.7 1.1 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady State Steady State RJA RJL Typ 32 60 17 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4407A Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID = -250A, VGS = 0V VDS = -30V, VGS = 0V TJ = 55C VDS = 0V, VGS = 25V VDS = VGS ID = -250A VGS = -10V, VDS = -5V VGS = -20V, ID = -12A Static Drain-Source On-Resistance TJ=125C VGS = -10V, ID = -12A VGS = -5V, ID = -10A gFS VSD IS Forward Transconductance VDS = -5V, ID = -10A IS = -1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current -1.7 -60 8.5 11.5 10 27 21 -0.7 -1 -3 2060 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 370 295 2.4 30 VGS=-10V, VDS=-15V, ID=-12A 4.6 10 11 VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 IF=-12A, dI/dt=100A/s 9.4 24 12 30 22 40 3.6 39 2600 11 15 13 38 S V A pF pF pF nC nC nC ns ns ns ns ns nC m -2.3 Min -30 -10 -50 100 -3 Typ Max Units V A nA V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev3: Jan 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 -10V 60 -6V -5V -ID(A) 60 80 VDS= -5V -ID (A) 40 -4.5V -4V 40 125C 20 25C 0 20 VGS= -3.5V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 40 Normalized On-Resistance VGS=-5V 30 RDS(ON) (m) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=-20V ID=-12A 1.4 VGS=-10V ID=-12A 20 VGS=-10V 10 VGS=-20V 0 0 4 8 1.2 1.0 VGS=-5V ID=-10A IF=-6.5A,16 dI/dt=100A/s 12 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 125C -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 25 RDS(ON) (m) 20 ID=-12A 125C 1E-03 15 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25C OUT OF 10 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 5 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. -IS (A) 1E-02 www.aosmd.com AO4407A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-12A 3000 2500 Ciss Capacitance (pF) 2000 1500 1000 500 Crss 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss 100 10s 10 -ID (Amps) 100s 1000 TJ(Max)=150C TA=25C 1 RDS(ON) limited 10ms 100ms Power (W) 1ms 100 0.1 TJ(Max)=150C TA=25C 10 10s DC 1 0.01 0.1 IF=-6.5A, dI/dt=100A/s 10 100 -VDS (Volts) 1 0.00001 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) 0.001 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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